6
RF Device Data
Freescale Semiconductor
MRFE6S8046NR1 MRFE6S8046GNR1
TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
10
?70
?10
?20
?30
?50
100
?40
IRL, INPUT RETURN LOSS (dB)
870
IRL
Gps
f, FREQUENCY (MHz)
Figure 4. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout
= 35.5
Watts CW
?16
?8
?10
?12
?14
17
22
42
62
60
58
56
52
50
48
46
G
ps
, POWER GAIN (dB)
880 890 900 910 920 930 940 970950 960
54
44
?18
η
D
, DRAIN EFFICIENCY (%)
VDD= 28 Vdc
Pout
= 35.5 W CW
IDQ
= 300 mA
IRL, INPUT RETURN LOSS (dB)
Gps
f, FREQUENCY (MHz)
Figure 5. Power Gain, Input Return Loss, EVM and Drain
Efficiency versus Frequency @ Pout
= 17.8
Watts Avg.
?18
?10
?12
?14
?16
17
22
1
48
46
44
42
6
5
4
3
G
ps
, POWER GAIN (dB)
40
2
?20
VDD= 28 Vdc, Pout
= 17.8 W (Avg.)
IDQ
= 285 mA, EDGE Modulation
TWO?TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Two-Tone Spacing
IMD, INTERMODULATION DISTORTION (dBc)
EVM
EVM, ERROR VECTOR
MAGNITUDE (% rms)
IM3?U
IM3?L
IM5?U
IM5?L
IM7?L
IM7?U
VDD
= 28 Vdc, P
out
= 41
W (PEP), IDQ
= 300
mA
Two?Tone Measurements
(f1 + f2)/2 = Center Frequency of 880
MHz
ηD
17.5
21.5
21
20.5
19
18.5
18
20
19.5
21.5
21
20.5
20
19.5
19
18.5
18
17.5
?60
1
870 880 890 900 910 920 930 940 970950 960
ηD
IRL
0
70
16
21
0
75
VDD
= 28 Vdc
IDQ
= 300 mA
f = 880 MHz
10
1
18
17
30
15
Pout, OUTPUT POWER (WATTS) CW
Figure 7. Power Gain and Drain Efficiency
versus Output Power
G
ps
, POWER GAIN (dB)
Gps
20
19
60
45
η
D
, DRAIN EFFICIENCY (%)
ηD
894 MHz
864 MHz
880 MHz
894 MHz
864 MHz
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